[1] Xiaoyu Ma, Junkai Huang, Jielin Fang, Wanling Deng . A compact model of the reverse gate-leakage current in GaN-based HEMTs. Solid-State Electronics, 2016, 126: 10-13. ( SCI收录 )
[2] Xiaoyu Ma, Songlin Chen, Wanling Deng, and Junkai Huang. Modeling of I-V characteristics in symmetric double-gate polysilicon thin-film transistors, AIP Advances，2017，6(7) : 065201. ( SCI收录 )
[3] Ma Xiaoyu, Deng Wanling, Huang Junkai. Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs, Journal of Semiconductors, 2014,35(3): 032002. (EI收录)
[4] Xiaoyu Ma, Fei Yu, Wanling Deng , Junkai Huang. Physics-based Modeling of Gate-leakage Current in AlGaN/GaN High Electron Mobility Transistors. the 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices -TFT Technologies and FPD Materials- (AM-FPD ’16). Kyoto, Japan: July 2016：157-159. (EI收录)
[5] Xiaoyu Ma, Wanling Deng, Junkai Huang. Explicit approximation of surface potential for fully-depleted polysilicon thin-film transistors. International Workshop on Junction Technology (IWJT 2012 ). Shanghai, China: May 2012：164-167.
[6] 马晓玉，邓婉玲，黄伟英，黄君凯.多维结构实践教学模式在电子信息类专业的实践. 实验室研究与探索.Vol.31,No.8, P364-366. 2012年8月.